High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm.

Monolithic source of photon pairs.

The creation of monolithically integratable sources of single and entangled photons is a top research priority with formidable challenges: The production, manipulation, and measurement of the photons should all occur in the same material platform, thereby fostering stability and scalability. Here we demonstrate efficient photon pair production in a semiconductor platform, gallium arsenide. Our results show type-I spontaneous parametric down-conversion of laser light from a 2.

Difference-frequency generation in AlGaAs Bragg reflection waveguides.

We demonstrate Type II difference-frequency generation (DFG) around 1550 nm in AlGaAs Bragg reflection waveguides using a pump around 778 nm and a signal within the C-band range. Difference-frequency power of 0.95 nW was obtained using a pump power of 62.

Type-0 second order nonlinear interaction in monolithic waveguides of isotropic semiconductors.

We report the observation of type-0 phase-matching in bulk z-grown Al(x)Ga(1-x)As Bragg reflection waveguides where TM-polarized second-harmonic is generated using TM-polarized pump. For a pulsed pump with 1.8 ps temporal width and an average power of 3.

Bragg reflection waveguide diode lasers.

What we believe to be the first demonstration of an edge-emitting Bragg reflection waveguide laser is reported. The laser utilized InGaAs quantum wells emitting at 980 nm, with Al(x)Ga(1-x)As core and claddings. The lasing mode is centered in a low-index core with a width of 700 nm, hence providing a large mode volume with strong discrimination against any modes other than the fundamental photonic bandgap mode.

Continuous-wave sum-frequency generation in AlGaAs Bragg reflection waveguides.

Efficient sum-frequency generation in epitaxial GaAs/AlGaAs waveguides is reported. Phase matching is achieved for type II nonlinear interaction using Bragg reflection waveguides. Continuous-wave signal and pump in 1550 nm wavelength window were used for upconversion of photons to the 775 nm region.

Continuous-wave second harmonic generation in Bragg reflection waveguides.

We report the observation of continuous-wave second harmonic generation for a pump at 1559.9 nm in type-I phase-matched Bragg reflection waveguide using the GaAs/Al(x)Ga(1)1-(x)As material system. For an internal pump power of 94 mW, phase-matched second harmonic power of 23 nW was measured in a waveguide with a length of 1.