With the increasing importance of power storage devices, demand for the development of supercapacitors possessing both rapid reversible chargeability and high energy density is accelerating. Here we propose a simple process for the room temperature fabrication of pseudocapacitor electrodes consisting of a faradaic redox reaction layer on a metallic electrode with an enhanced surface area. As a model metallic electrode, an Au foil was irradiated with Ar ions with a simultaneous supply of C and Ni at room temperature, resulting in fine metallic Ni nanoparticles dispersed in the carbon matrix with local graphitization on the ion-induced roughened Au surface.
View Article and Find Full Text PDFWe present the device properties of a nickel (Ni)-gallium oxide (GaO) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/GaO/In was created using a chemical vapor-deposited hBN film on a GaO substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer.
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