Publications by authors named "Bhagyashri Todankar"

With the increasing importance of power storage devices, demand for the development of supercapacitors possessing both rapid reversible chargeability and high energy density is accelerating. Here we propose a simple process for the room temperature fabrication of pseudocapacitor electrodes consisting of a faradaic redox reaction layer on a metallic electrode with an enhanced surface area. As a model metallic electrode, an Au foil was irradiated with Ar ions with a simultaneous supply of C and Ni at room temperature, resulting in fine metallic Ni nanoparticles dispersed in the carbon matrix with local graphitization on the ion-induced roughened Au surface.

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We present the device properties of a nickel (Ni)-gallium oxide (GaO) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/GaO/In was created using a chemical vapor-deposited hBN film on a GaO substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer.

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