Formation of atomically ordered and chemically selective Si-O-Ti monolayer on SiGe(110) for a MIS structure via HO(g) functionalization.

SiGe(110) surfaces were passivated and functionalized using atomic H, hydrogen peroxide (HO), and either tetrakis(dimethylamino)titanium (TDMAT) or titanium tetrachloride (TiCl) and studied in situ with multiple spectroscopic techniques. To passivate the dangling bonds, atomic H and HO(g) were utilized and scanning tunneling spectroscopy (STS) demonstrated unpinning of the surface Fermi level. The HO(g) could also be used to functionalize the surface for metal atomic layer deposition.

Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces.

Density-functional theory molecular dynamics simulations were employed to investigate direct interfaces between a-Al2O3 and Si0.50Ge0.50 with Si- and Ge-terminations.

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces.

Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface.

Density functional theory based study of graphene and dielectric oxide interfaces.

We study the effects of insulating oxides in their crystalline forms on the energy band structure of monolayer and bilayer graphene using a first principles density functional theory based electronic structure method and a local density approximation. We consider the dielectric oxides SiO(2) (α-quartz) and Al(2)O(3) (alumina or α-sapphire), each with two surface terminations. Our study suggests that atomic relaxations and resulting equilibrium separations play a critical role in perturbing the linear band structure of graphene in contrast to the less critical role played by dangling bonds that result from cleaving the crystal in a particular direction.