SiGe epitaxy on a 300 mm batch furnace.

This work reports the feasibility of silicon and silicon germanium epitaxy using an ASM A412(TMa) LPCVD all quartz, hot wall, vertical batch furnace reactor using 100 wafer product loads. The very same furnace can be used for 25 wafer and 200 wafer load size, without any hardware changes, dependant on production needs. Following this approach a significant cost reduction for epitaxy in 300 mm high volume manufacturing is possible and enables new applications.

Electron tunneling through alkanedithiol self-assembled monolayers in large-area molecular junctions.

The electrical transport through self-assembled monolayers of alkanedithiols was studied in large-area molecular junctions and described by the Simmons model [Simmons JG (1963) J Appl Phys 34:1793-1803 and 2581-2590] for tunneling through a practical barrier, i.e., a rectangular barrier with the image potential included.