Impact of oxygen exchange reaction at the ohmic interface in TaO-based ReRAM devices.

Interface reactions constitute essential aspects of the switching mechanism in redox-based resistive random access memory (ReRAM). For example, the modulation of the electronic barrier height at the Schottky interface is considered to be responsible for the toggling of the resistance states. On the other hand, the role of the ohmic interface in the resistive switching behavior is still ambigious.

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices.

Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g.