Forming-Free Tunable Analog Switching in WO/TaO Heterojunction for Emulating Electronic Synapses.

In this work, the sputtered deposited WO/TaO switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high R/R ratio (~10).

Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO/TaOx/TaN Devices.

As artificial intelligence technology advances, it is necessary to imitate various biological functions to complete more complex tasks. Among them, studies have been reported on the nociceptor, a critical receptor of sensory neurons that can detect harmful stimuli. Although a complex CMOS circuit is required to electrically realize a nociceptor, a memristor with threshold switching characteristics can implement the nociceptor as a single device.

Resistive Switching Characteristics of Alloyed AlSiO Insulator for Neuromorphic Devices.

Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteristics, and thus has been studied as a next-generation memory application and neuromorphic system area. In this paper, AlSiO, which was used as an alloyed insulator, was used to secure stable switching.