Publications by authors named "BeomSuk Lee"

Much higher risk of cancer has been found in diabetes patients. Insulin receptor (IR) and insulin-like growth factor 1 receptor (IGF1R) have been extensively studied in both breast cancer and diabetes therapies. Interestingly, a recent study proposed that IR/IGF1R ratio is an important factor for breast cancer prognosis.

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In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below V(R)=5  V), low operating voltage (avalanche breakdown voltage=8-13  V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ~10¹⁷ cm⁻³). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.

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We experimentally demonstrate a linearized Y-fed directional coupler (DC) modulator based on an electro-optic (EO) polymer waveguide. The spurious free dynamic range of 119 dB/Hz2/3, which is 11 dB higher than that of the conventional Mach-Zehnder modulator, is achieved by introducing the reversed Δβ technique in the two-section Y-fed DC. The in-device EO coefficient (r33) of the fabricated device is as high as 79 pm/V in 1.

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Background: Zinc is known to play an important role for growth and development, the immune response, neurological function, and reproduction. Although the etiology of burning mouth syndrome (BMS) is unknown, zinc deficiency may be implicated in the pathogenesis of BMS. The aim of this study was to demonstrate a causal relationship between zinc deficiency and BMS and to assess whether zinc replacement is an effective therapy for BMS.

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A bias-free two-section Y-branch directional coupler modulator with high linearity based on domain-inverted modulation is fabricated and tested. 25 wt.% AJLS102/APC is used as an active core layer with an experimentally confirmed device r(33) value of 56 pm/V at 1.

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