Subwavelength-modulated silicon photonics for low-energy free-electron-photon interactions.

We investigate silicon waveguides with subwavelength-scale modulation for applications in free-electron-photon interactions. The modulation enables velocity matching and efficient interactions between low-energy electrons and co-propagating photons. Specifically, we design a subwavelength-grating (SWG) waveguide for interactions between 23-keV free electrons and ≈1500-nm photons.

Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex loads.

In this work, we report the use of commercial gallium nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors. This was accomplished by taking advantage of the small form-factor, low-power dissipation, and high temperature compatibility of GaN field effect transistors (GaNFETs) to integrate pulsers directly into the loads to be switched, even under vacuum. This integration reduces parasitics to allow for faster switching and removes the requirement to impedance match the load to a transmission line by allowing for a lumped element approximation of the load even with subnanosecond switching.