Passivation of acceptors in GaN by hydrogen and their activation.

GaN is an important semiconductor for energy-efficient light-emitting devices. Hydrogen plays a crucial role in gallium nitride (GaN) growth and processing. It can form electrically neutral complexes with acceptors during growth, which significantly increases the acceptor incorporation.

MOCVD Growth and Characterization of Be-Doped GaN.

Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be defects and other compensating defects render most GaN:Be materials n-type or semi-insulating at best. Previous reports use molecular beam epitaxy or ion implantation to dope GaN with Be, almost exclusively.

Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor.

The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used with this device to detect the presence of micromolar levels of hydrogen peroxide typically associated with intracellular processes. The real-time electrical response of the high electron mobility transistor sensor showed a gradual decrease in the two-dimensional electron gas current as the reaction proceeded over time.

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD.

We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. Total magnesium concentration in planar regions surrounding a hillock structure is comparable to that within hillock sidewall facets measured at 1.3 × 10 cm by atom probe tomography, and clustering of Mg atoms is seen in all regions of the film.