On the oxidation of gallium and indium: characterization of the cyclic and linear GaO2 and InO2 molecules generated by the spontaneous and photoinduced reaction of Ga and In atoms with O2 and determination of the reaction mechanism.

In this work, the spontaneous and photolytically activated reactions of Ga and In atoms (M) with O2 (in Ar and solid O2) are studied with the aid of the matrix-isolation technique and the use of IR, Raman, and UV/Vis spectroscopy in combination with detailed quantum-chemical calculations. Vibrational spectra were recorded for several different isotopomers (69Ga, 71Ga, 16O2, 18O2, 16O18O). The results show that the spontaneously formed cyclic MO2 molecules photoisomerize to give the linear OMO molecules.

Characterization of isolated Ga2 molecules by resonance Raman spectroscopy and variations of Ga-Ga bonding.

Isolated Ga2 dimers were characterized in an argon matrix with the aid of resonance Raman and UV/Vis spectroscopy. The resonance Raman spectra gave evidence of not only the nu(Ga-Ga) fundamental, but also four overtones. Each of the signals exhibits 69Ga/71Ga isotopic splitting leading to the triplet pattern characteristic of two equivalent Ga atoms.

Some novel binuclear group 13 metal tin hydrides formed in Ar matrices following the codeposition of the metal vapor with SnH4.

IR measurements show that co-condensation of Al or Ga atoms (M) with SnH4 in a solid Ar matrix at about 12 K results mainly in the spontaneous insertion of the metal into an Sn-H bond to form the M(II) hydride HMSnH3. Simultaneously the Ga2 dimer also reacts with SnH4, possibly to form a nido-type cluster Ga2(mu-H)4Sn, with a metal-deficient cubane-like structure. All of these products are photolabile.

Matrix reactivity of Al and Ga atoms (M) in the presence of silane: generation and characterization of the eta2-coordinated complex M.SiH4, the insertion product HMSiH3, and the MI species MSiH3 in a solid argon matrix.

Matrix isolation experiments give evidence for the formation of the loosely bonded metal-silane complex M.SiH(4) by the spontaneous reaction of Al or Ga atoms (M) with silane in a solid Ar matrix at 12 K; however, Ga(2) appears to insert spontaneously into an Si--H bond to form HGaGaSiH(3), probably with the structure HGa(micro-SiH(3))Ga. In M.

Why does a Ga(2) dimer react spontaneously with H2, but a Ga atom does not?--A detailed quantum chemical investigation of the differences in reactivity between ga atoms and Ga(2) dimers, in combination with experimental results.

The spontaneous and photoactivated reactions between Ga(2) and H(2) in a matrix of solid Ar at 12 K have been followed by using IR spectroscopy and have been shown to give access to several isomers of the subvalent hydride Ga(2)H(2). We now present Raman spectra for this system, to complete its characterization on the basis of vibrational spectra. In addition, the differences between the reactivity of a Ga atom and a Ga(2) dimer toward H(2) are evaluated.

Structure and bonding in the aluminum radical species Al x NH(3), HAlNH(2), HAlNH(2) x NH(3), and Al(NH(2))(2) studied by means of matrix IR spectroscopy and quantum chemical calculations.

Experimental matrix IR spectra in alliance with extensive quantum chemical calculations provide a framework for the detailed evaluation of the structures and electronic properties of the doublet species Al x NH(3), Al(NH(3))(2), HAlNH(2), HAlNH(2) x NH(3), and Al(NH(2))(2). These species were the products of the reaction of Al atoms with NH(3) in an Ar matrix. While the two species Al x NH(3) and HAlNH(2) were already sighted in previous experiments, the results described herein lead to the first identification and characterization of HAlNH(2) x NH(3) and Al(NH(2))(2), the products of the reaction of Al atoms with two NH(3) molecules.