Developing an Analysis Procedure and Dispersion Model for Pristine and W-Doped VO Thin Films Using Density Functional Theory and Spectroscopic Ellipsometry.

Vanadium dioxide (VO) and its unique phase transition from semiconductor to metal near room temperature ( = 68 °C) offer significant potential for applications in smart materials and advanced technologies. This transition is accompanied by a drastic modulation of VO's optical properties in the near- and far-infrared regions. Tungsten (W) has been successfully used as a dopant to lower the transition to room temperature.