Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.

The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576 °C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperatures, declining from 53 mV/V/T to 8.3 mV/V/T for the InAlN/GaN sample and from 89 mV/V/T to 8.