Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.

Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates.

A transition in source-drain current vs. back gate voltage (ID-VBG) characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.

Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

The energy storage properties of Pb0.92La0.08Zr0.

Lead lanthanum zirconate titanate ceramic thin films for energy storage.

An acetic-acid-based sol-gel method was used to deposit lead lanthanum zirconate titanate (PLZT, 8/52/48) thin films on either platinized silicon (Pt/Si) or nickel buffered by a lanthanum nickel oxide buffer layer (LNO/Ni). X-ray diffraction and scanning electron microscopy of the samples revealed that dense polycrystalline PLZT thin films formed without apparent defects or secondary phases. The dielectric breakdown strength was greater in PLZT thin films deposited on LNO/Ni compared with those on Pt/Si, leading to better energy storage.