Defect-free bicomponent fibers of poly{[,'-bis(2-octyl-dodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]--5,5'-(2,2'-bithiophene)}/poly(ethyleneoxide) P(NDI2OD-T2)/PEO are fabricated by means of electrospinning and rinsed with a selective solvent to afford pure P(NDI2OD-T2) while maintaining a fibrous morphology. The elongation strength applied on the spun jet by the high electrical field induces a preferential orientation of polymer chains. An electron mobility analogous to the best obtained with a thin film-based device is achieved in single fiber transistors, and the results are unaffected by the dielectric surface treatment.
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