Demonstration of passive, nonlinear, and active devices on a hybrid photonic platform.

The monolithic fabrication of passive, nonlinear, and active functionalities on a single chip is highly desired in the wake of the development and commercialization of integrated photonic platforms. However, the co-integration of diverse functionalities has been challenging as each platform is optimized for specific applications, typically requiring different structures and fabrication flows. In this article, we report on a monolithic and complementary metal-oxide-semiconductor CMOS-compatible hybrid wafer-scale photonics platform that is suitable for linear, nonlinear, and active photonics based on moderate confinement 0.

Octave-spanning supercontinuum generation in a CMOS-compatible thin SiN waveguide coated with highly nonlinear TeO.

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride (SiN) has emerged as a leading on-chip platform. To achieve suitable group velocity dispersion and high confinement for broadband SCG the SiN waveguide layer used is typically thick (>∼700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave-spanning SCG in a thinner moderate-confinement 400-nm SiN platform using a highly nonlinear tellurium oxide (TeO) coating.