Effective Landé factors for an electrostatically defined quantum point contact in silicene.

The transconductance and effective Landé [Formula: see text] factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin-orbit coupling in buckled silicene reduces the [Formula: see text] factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.