Publications by authors named "Barthem V"

The continuous reduction in size of spintronic devices requires the development of structures, which are insensitive to parasitic external magnetic fields, while preserving the magnetoresistive signals of existing systems based on giant or tunnel magnetoresistance. This could be obtained in tunnel anisotropic magnetoresistance structures incorporating an antiferromagnetic, instead of a ferromagnetic, material. To turn this promising concept into real devices, new magnetic materials with large spin-orbit effects must be identified.

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The magnetic moment induced on Rh atoms, forming 1.6 nm average diameter clusters, embedded in an Al(2)O(3) matrix, has been determined using x-ray magnetic circular dichroism measurements. The magnetic moment varies linearly with the applied magnetic field.

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