Thermal electron attachment to halogenated silanes in the gas phase.

Rationale: Silane derivatives play a crucial role in industrial plasma processes for the fabrication of various electronic devices such as lighting devices, solar cells, and displays. Accurate quantitative data are essential for modeling technological plasmas. This study reports the rate coefficients (k) and activation energies (E) for thermal electron attachment to SiCl, Si (CH)CHF, and SiCl (CH)Si(CH), which are key parameters for understanding the underlying processes in plasmas.