An atomic hydrogen etching sensor for H plasma diagnostics.

A simple and selective new technique for atomic hydrogen flux measurements in a hydrogen plasma environment is introduced and demonstrated in this work. This technique works by measuring the etching rate of an amorphous carbon film and translating this to an incoming hydrogen radical flux through a well-defined carbon etch yield per radical. Ions present in the plasma environment have a much higher etch yield than radicals do.

Analysis of retarding field energy analyzer transmission by simulation of ion trajectories.

Retarding field energy analyzers (RFEAs) are used routinely for the measurement of ion energy distribution functions. By contrast, their ability to measure ion flux densities has been considered unreliable because of lack of knowledge about the effective transmission of the RFEA grids. In this work, we simulate the ion trajectories through a three-gridded RFEA using the simulation software SIMION.

Photoluminescence-based detection of particle contamination on extreme ultraviolet reticles.

Here, we propose a comparison-free inspection technique to detect particle contamination on the reticle of extreme ultraviolet (EUV) lithography systems, based on the photoluminescence spectral characteristics of the contaminant particles and their elemental composition. We have analyzed the spectra from different particles found on reticles in EUV lithographic systems and have determined the minimum detectable particle size: 25 nm for organic particles and 100 nm for Al particles. Stainless steel coatings (50 nm thick and 50 × 50 μm(2) in area) exhibit detectable photoluminescence, and the estimated minimum detectable particle is 2 μm.

Short period La/B and LaN/B multilayer mirrors for ~6.8 nm wavelength.

In the first part of this article we experimentally show that contrast between the very thin layers of La and B enables close to theoretical reflectance. The reflectivity at 6.8 nm wavelength was measured from La/B multilayer mirrors with period thicknesses ranging from 3.

Extreme ultraviolet multilayer mirror with near-zero IR reflectance.

We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation that has low reflectance for IR radiation at 10.6 mum wavelength. The mirror is based on a multilayer coating comprising alternating layers of diamondlike carbon and silicon, for which we demonstrate an EUV reflectance of up to 49.

Spectral-purity-enhancing layer for multilayer mirrors.

We demonstrate, both theoretically and experimentally, that special spectral-purity-enhancing multilayer mirror systems can be designed and fabricated to substantially reduce the level of out-of-band radiation expected in an extreme ultraviolet lithographic tool. A first proof of principle of applying such spectral-purity-enhancement layers showed reduced out-of-band reflectance by a factor of five, while the in-band reflectance is only 4.5% (absolute) less than for a standard capped multilayer.

Particle-in-cell Monte Carlo simulations of an extreme ultraviolet radiation driven plasma.

A self-consistent kinetic particle-in-cell model has been developed to describe a radiation driven plasma. Collisions between charged species and the neutral background are represented statistically by Monte Carlo collisions. The weakly ionized plasma is formed when extreme ultraviolet radiation coming from a pulsed discharge photoionizes a low pressure argon gas.

Subnanosecond Thomson scattering on a vacuum arc discharge in tin vapor.

In a previous series of Thomson scattering (TS) experiments on an extreme ultraviolet producing vacuum arc discharge in tin vapor, background radiation emitted by the plasma was found to make measurements impossible for all parts of the discharge except the prepinch phase. To reduce the level of recorded background radiation, we have built a setup for time and space resolved subnanosecond TS. Results obtained with this new setup are presented for experiments on previously inaccessible parts of the discharge--the ignition phase, pinch phase, and decay phase.

Comparison of experimental and simulated extreme ultraviolet spectra of xenon and tin discharges.

Xenon and tin both are working elements applied in discharge plasmas that are being developed for application in extreme ultraviolet (EUV) lithography. Their spectra in the 10-21-nm-wavelength range have been analyzed. A fully analytical collisional-radiative model, including departure from equilibrium due to a net ionization rate, was used to simulate the EUV spectra.

Characterization of a vacuum-arc discharge in tin vapor using time-resolved plasma imaging and extreme ultraviolet spectrometry.

Discharge sources in tin vapor have recently been receiving increased attention as candidate extreme ultraviolet (EUV) light sources for application in semiconductor lithography, because of their favorable spectrum near 13.5 nm. In the ASML EUV laboratory, time-resolved pinhole imaging in the EUV and two-dimensional imaging in visible light have been applied for qualitative characterization of the evolution of a vacuum-arc tin vapor discharge.

Stark broadening experiments on a vacuum arc discharge in tin vapor.

Pinched discharge plasmas in tin vapor are candidates for application in future semiconductor lithography tools. This paper presents time-resolved measurements of Stark broadened linewidths in a pulsed tin discharge. Stark broadening parameters have been determined for four lines of the Sn III spectrum in the range from 522 to 538 nm, based on a cross-calibration to a Sn II line with a previously known Stark width.

Collective Thomson scattering experiments on a tin vapor discharge in the prepinch phase.

Partially collective Thomson scattering measurements have been performed on a triggered vacuum arc in tin vapor, which is a candidate source of extreme ultraviolet light for application in semiconductor lithography. In this paper, results on the electron densities and temperatures are presented for the prepinch phase of the discharge. Electron densities and temperatures increase from 1 x 10(23) m(-3) to 1 x 10(24) m(-3) and from 5 eV to over 30 eV, respectively, in about 100 ns.

Time-resolved pinhole camera imaging and extreme ultraviolet spectrometry on a hollow cathode discharge in xenon.

A pinhole camera, an extreme ultraviolet (EUV) spectrometer, a fast gatable multichannel plate EUV detector, and a digital camera have been installed on the ASML EUV laboratory setup to perform time-resolved pinhole imaging and EUV spectroscopy on a copy of the Philips EUV hollow cathode discharge plasma source. The main properties of the setup have been characterized. Time-resolved measurements within the plasma pulse in the EUV have been performed on this source.