High energy resolution CsPbBr alpha particle detector with a full-customized readout application specific integrated circuit.

α particles must be monitored to be managed as radioactive diagnostic agents or nuclear activity indicators. The new generation of perovskite detectors suffer from limited energy resolution, which affects spectroscopy and imaging applications. Here, we report that the solution-grown CsPbBr crystal exhibits a low and stable dark current (34.

Selenophosphate PbPSe Single Crystals Growth by Chemical Vapor Transport (CVT) Method for Radiation Detection.

The heavy metal selenophosphate PbPSe emerges as a promising room-temperature X-ray/γ-ray detectors due to its high resistivity, robust radiation-blocking capability, and outstanding carrier mobility-lifetime product, etc. However, the high activity of phosphides poses significant impediment to the synthesis and single crystal growth. In this work, we have prepared high-quality PbPSe single crystals with using the chemical vapor transport (CVT) method.

Realizing the Ultralow Lattice Thermal Conductivity of CuSbSe Compound via Sulfur Alloying Effect.

CuSbSe is a potential p-type thermoelectric material, distinguished by its earth-abundant, inexpensive, innocuous, and environmentally friendly components. Nonetheless, the thermoelectric performance is poor and remains subpar. Herein, the electrical and thermal transport properties of CuSbSe were synergistically optimized by S alloying.

High-Performance Industrial-Grade CsPbBr Single Crystal by Solid-Liquid Interface Engineering.

All-inorganic metal halide perovskite CsPbBr crystal is regarded as an attractive alternative to high purity Ge and CdZnTe for room temperature γ-ray detection. However, high γ-ray resolution is only observable in small CsPbBr crystal; more practical and deployable large crystal exhibits very low, and even no detection efficiency, thereby thwarting prospects for cost-effective room temperature γ-ray detection. The poor performance of large crystal is attributed to the unexpected secondary phase inclusion during crystal growth, which traps the generated carriers.

Engineering Multiple Microstructural Defects for Record-Breaking Thermoelectric Properties of Chalcopyrite Cu Ag GaTe.

Defect engineering for vacancies, holes, nano precipitates, dislocations, and strain are efficient means of suppressing lattice thermal conductivity. Multiple microstructural defects are successfully designed in Cu Ag GaTe (0 ≤ x ≤ 0.5) solid solutions through high-ratio alloying and vibratory ball milling, to achieve ultra-low thermal conductivity and record-breaking thermoelectric performance.

Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe.

Realizing high average thermoelectric figure of merit (ZT ) and power factor (PF ) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT and PF in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb Se Te (x = 0-0.

Bulk Metamaterials Exhibiting Chemically Tunable Hyperbolic Responses.

Extraordinary properties of traditional hyperbolic metamaterials, not found in nature, arise from their man-made subwavelength structures causing unique light-matter interactions. However, their preparation requiring nanofabrication processes is highly challenging and merely provides nanoscale two-dimensional structures. Stabilizing their bulk forms via scalable procedures has been a sought-goal for broad applications of this technology.

Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal.

Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2-2.

Exceptionally High Average Power Factor and Thermoelectric Figure of Merit in n-type PbSe by the Dual Incorporation of Cu and Te.

Thermoelectric materials with high average power factor and thermoelectric figure of merit (ZT) has been a sought-after goal. Here, we report new n-type thermoelectric system CuPbSeTe ( = 0.0025, 0.

Integration of multi-scale defects for optimizing thermoelectric properties of n-type CuCdFeS (x = 0-0.1).

The performance of thermoelectric (TE) materials is strongly influenced by multi-scale defects. Some defects can improve the TE performance but some are unfavorable. Therefore, the multi-scale defects need to be integrated rationally to enhance the TE properties.

Highly robust and flexible n-type thermoelectric film based on AgTe nanoshuttle/polyvinylidene fluoride hybrids.

Highly robust and flexible n-type thermoelectric (TE) films based on Ag2Te nanoshuttle/polyvinylidene fluoride were prepared by a solution-processable method without a surfactant. A good power performance of over 30 μW (m K2)-1 at room temperature was achieved. Moreover, the synthesized fabrics also exhibited potential for application in flexible electronic devices with negligible performance change after 1000 bending cycles.