Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator.

Catalyst-free, selective nano-epitaxy of III-V nanowires provides an excellent materials platform for designing and fabricating ultra-compact, bottom-up photonic crystal lasers. In this work, we propose a new type of photonic crystal laser with a curved cavity formed by InGaAs nanowires grown directly on silicon-on-insulator. This paper investigates the effect of the radius of the curved cavity on the emission wavelength, quality factor as well as laser beam emission angle.