Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology.

Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.

Solar-Driven Sustainability: III-V Semiconductor for Green Energy Production Technologies.

Long-term societal prosperity depends on addressing the world's energy and environmental problems, and photocatalysis has emerged as a viable remedy. Improving the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated charges. It has been demonstrated that the fabrication of III-V semiconductor-based photocatalysts is effective in increasing solar light absorption, long-term stability, large-scale production and promoting charge transfer.

Low-Leakage Current Core-Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band.

Despite the considerable potential of AlGaN-based ultraviolet-B light-emitting diodes (UV-B LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical technology, their development is still ongoing due to low luminescence efficiency. In this study, we introduced a novel epitaxial growth mechanism to effectively control the height and thickness of AlGaN multiple wells (MWs) on AlGaN nanorod structures using horizontal reactor-based metal-organic chemical vapor deposition (MOCVD). By adjusting the H carrier gas flow rate, we could control the growth boundary layer's thickness, successfully separating the AlGaN well and p-AlGaN layer from the substrate.

New Disposable Nitric Oxide Sensor Fabrication Using GaN Nanowires.

Gallium nitride (GaN) nanowires anchored on the surface of cost-effective pencil graphite electrodes (PGEs) have been developed as a new disposable nitric oxide (NO) sensor through a hydrothermal method followed by annealing treatment. The as-obtained nanomaterials were examined by field emission scanning electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and EIS. Concurrently, the electrocatalytic performance has been analyzed using cyclic voltammetry and amperometric measurements.