Effect of fabrication process on contact resistance and channel in graphene field effect transistors.

Contact resistance, as one of the main parameters that limits the performance of graphene-based transistors, is highly dependent on the metal-graphene contact fabrication processes. These processes are investigated and the corresponding resistances are measured based on the transfer length method (TLM). In fabrication processes, when annealing is done on chemical vapor deposition (CVD)-grown graphene samples that are transferred onto SiO/Si substrates, the adhesion of graphene to the substrate is improved, and poly methyl methacrylate (PMMA) residues are also reduced.