Rice glycosyltransferase OsDUGT1 is involved in heat stress tolerance by glycosylating flavonoids and regulating flavonoid metabolism.

One significant environmental element influencing the growth and yield of rice ( L.) is high temperature. Nevertheless, the mechanism by which rice responds to high temperature is not fully understood.

Advances in RNA secondary structure prediction and RNA modifications: Methods, data, and applications.

Due to the hierarchical organization of RNA structures and their pivotal roles in fulfilling RNA functions, the formation of RNA secondary structure critically influences many biological processes and has thus been a crucial research topic. This review sets out to explore the computational prediction of RNA secondary structure and its connections to RNA modifications, which have emerged as an active domain in recent years. We first examine the progression of RNA secondary structure prediction methodology, focusing on a set of representative works categorized into thermodynamic, comparative, machine learning, and hybrid approaches.

Two pathogen-inducible UDP-glycosyltransferases, UGT73C3 and UGT73C4, catalyze the glycosylation of pinoresinol to promote plant immunity in Arabidopsis.

UDP-glycosyltransferases (UGTs) constitute the largest glycosyltransferase family in the plant kingdom. They are responsible for transferring sugar moieties onto various small molecules to control many metabolic processes. However, their physiological significance in plants is largely unknown.

The Impact of Exercise Play on the Biomechanical Characteristics of Single-Leg Jumping in 5- to 6-Year-Old Preschool Children.

Objective: This study aimed to investigate the effects of a 12-week self-designed exercise game intervention on the kinematic and kinetic data of the supporting leg in preschool children during the single-leg jump.

Methods: Thirty 5- to 6-year-old preschool children were randomly divided into an experimental group (EG) and a control group (CG). The BTS SMART DX motion capture analysis system was used to collect single-leg jump data before the intervention.

The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications.

In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the same 200 nm GaN buffer layer with an Fe-doped concentration of 8 × 10 cm. Due to the different thicknesses of the UID-GaN layer, the concentration of Fe trails reaching the two-dimensional electron gas (2DEG) varies.