Origin of Ising magnetism in CaCoO unveiled by orbital imaging.

The one-dimensional cobaltate Ca[Formula: see text]Co[Formula: see text]O[Formula: see text] is an intriguing material having an unconventional magnetic structure, displaying quantum tunneling phenomena in its magnetization. Using a newly developed experimental method, [Formula: see text]-core-level non-resonant inelastic x-ray scattering ([Formula: see text]-NIXS), we were able to image the atomic Co [Formula: see text] orbital that is responsible for the Ising magnetism in this system. We can directly observe that corrections to the commonly accepted ideal prismatic trigonal crystal field scheme occur in Ca[Formula: see text]Co[Formula: see text]O[Formula: see text], and it is the complex [Formula: see text] orbital occupied by the sixth electron at the high-spin Co[Formula: see text] ([Formula: see text]) sites that generates the Ising-like behavior.

Fundamental crystal field excitations in magnetic semiconductor SnO: Mn, Fe, Co, Ni.

Directly measuring elementary electronic excitations in dopant 3d metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the 3d electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO2. The crystal field splittings are compared to resonant inelastic X-ray scattering (RIXS) experiments, which measure precisely these elementary dd excitations.

Oxygen Vacancy Induced Structural Distortions in Black Titania: A Unique Approach using Soft X-ray EXAFS at the O-K Edge.

Unknown changes in the crystalline order of regular TiO result in the formation of black titania, which has garnered significant interest as a photocatalytic material due to the accompanying electronic changes. Herein, the nature of the lattice distortion caused by an oxygen vacancy was determined that in turn results in the formation of mid-band-gap states found in previous studies of black titania. An innovative technique is introduced using a state-of-the-art silicon drift detector, which can be used in conjunction with extended X-ray absorption fine structure (EXAFS) to measure bulk interatomic distances.

Bulk vs. Surface Structure of 3d Metal Impurities in Topological Insulator BiTe.

Topological insulators have become one of the most prominent research topics in materials science in recent years. Specifically, BiTe is one of the most promising for technological applications due to its conductive surface states and insulating bulk properties. Herein, we contrast the bulk and surface structural environments of dopant ions Cr, Mn, Fe, Co, Ni, and Cu in BiTe thin films in order to further elucidate this compound.