Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform.

For the first time, we demonstrate the hybrid integration of dual distributed feedback (DFB) quantum cascade lasers (QCLs) on a silicon photonics platform using an innovative 3D self-aligned flip-chip assembly process. The QCL waveguide geometry was predesigned with alignment fiducials, enabling a sub-micron accuracy during assembly. Laser oscillation was observed at the designed wavelength of 7.

Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity.

External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications.

Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range.

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer.

Short bends using curved mirrors in silicon waveguides for terahertz waves.

Dielectric waveguides are capable of confining and guiding terahertz waves along sub-wavelength sized structures. A small feature size allows for a denser integration of different photonic components such as modulators, beam-splitters, wavelength (de)multiplexers and more. The integration of components on a small scale requires bending of the waveguides.

Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection.

Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics.