Examining the influence of turbulence on viscosity measurements of molten germanium under reduced gravity.

The thermophysical properties of liquid germanium were recently measured both in parabolic flight experiments and on the ISS in the ISS-EML facility. The viscosity measurements differed between the reduced gravity experiments and the literature values. Since the oscillating drop method has been widely used in EML, further exploration into this phenomenon was of interest.

Thermophysical properties of a SiGe melt measured on board the International Space Station.

Thermophysical properties of highly doped SiGe melt were measured contactlessly in the electromagnetic levitation facility ISS-EML on board the International Space Station. The sample could be melted, overheated by about 375 K, and cooled down in 350 mbar Argon atmosphere. A large undercooling of about 240 K was observed and a quasi-homogeneous nucleation on the droplet surface occurred.

Layer-by-Layer Resistive Switching: Multistate Functionality due to Electric-Field-Induced Healing of Dead Layers.

Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic circuits. Here, we report a structurally driven switching mechanism involving the so-called "dead" layers of perovskite manganite surfaces.

Magnetic-Field-Induced Suppression of Jahn-Teller Phonon Bands in (LaPr)CaMnO: the Mechanism of Colossal Magnetoresistance shown by Raman Spectroscopy.

A long-standing issue in the physics of the colossal magnetoresistance is the role of electron-phonon coupling, which manifests itself as Jahn-Teller polarons. The origin and architecture of polarons makes it possible to study their behavior by Raman spectroscopy, which allows to analyze the polaronic behavior in an applied magnetic field. We performed magnetic-field-dependent Raman spectroscopy on thin films of (LaPr)CaMnO in a range of H = 0-50 kOe and compared the obtained Raman spectra with the magnetic field behavior of the electrical resistivity.