High-efficiency grating coupler for an ultralow-loss SiN-based platform.

Integrated silicon nitride waveguides of 100 nm height can achieve ultralow propagation losses below 0.1 dB/cm at the 1550 nm wavelength band but lack the scattering strength to form efficient grating couplers. An enhanced grating coupler design based on an amorphous silicon layer on top of silicon nitride is proposed and demonstrated to improve the directionality of the coupler.

Ultra-sensitive refractive index sensor using CMOS plasmonic transducers on silicon photonic interferometric platform.

Optical refractive-index sensors exploiting selective co-integration of plasmonics with silicon photonics has emerged as an attractive technology for biosensing applications that can unleash unprecedented performance breakthroughs that reaps the benefits of both technologies. However, towards this direction, a major challenge remains their integration using exclusively CMOS-compatible materials. In this context, herein, we demonstrate, for the first time to our knowledge, a CMOS-compatible plasmo-photonic Mach-Zehnder-interferometer (MZI) based on aluminum and Si3N4 waveguides, exhibiting record-high bulk sensitivity of 4764 nm/RIU with clear potential to scale up the bulk sensitivity values by properly engineering the design parameters of the MZI.

Plasmonics co-integrated with silicon nitride photonics for high-sensitivity interferometric biosensing.

We demonstrate a photonic integrated Mach-Zehnder interferometric sensor, utilizing a plasmonic stripe waveguide in the sensing branch and a photonic variable optical attenuator and a phase shifter in the reference arm to optimize the interferometer operation. The plasmonic sensor is used to detect changes in the refractive index of the surrounding medium exploiting the accumulated phase change of the propagating Surface-Plasmon-Polariton (SPP) mode that is fully exposed in an aqueous buffer solution. The variable optical attenuation stage is incorporated in the reference SiN branch, as the means to counter-balance the optical losses introduced by the plasmonic branch and optimize interference at the sensor output.

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication.

Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III-V semiconductors. Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established.