Generation of polarization-entangled photon pairs in a Bragg reflection waveguide.

We demonstrate experimentally that spontaneous parametric down-conversion in an AlxGa(1-x)As semiconductor Bragg reflection waveguide can make for paired photons highly entangled in the polarization degree of freedom at the telecommunication wavelength of 1550 nm. The pairs of photons show visibility higher than 90% in several polarization bases and violate a Clauser-Horne-Shimony-Holt Bell-like inequality by more than 3 standard deviations. This represents a significant step toward the realization of efficient and versatile self pumped sources of entangled photon pairs on-chip.

Power-efficient III-V/silicon external cavity DBR lasers.

We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW.

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm.

Monolithic source of photon pairs.

The creation of monolithically integratable sources of single and entangled photons is a top research priority with formidable challenges: The production, manipulation, and measurement of the photons should all occur in the same material platform, thereby fostering stability and scalability. Here we demonstrate efficient photon pair production in a semiconductor platform, gallium arsenide. Our results show type-I spontaneous parametric down-conversion of laser light from a 2.

Difference-frequency generation in AlGaAs Bragg reflection waveguides.

We demonstrate Type II difference-frequency generation (DFG) around 1550 nm in AlGaAs Bragg reflection waveguides using a pump around 778 nm and a signal within the C-band range. Difference-frequency power of 0.95 nW was obtained using a pump power of 62.