Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation.

We report on the influence of low gamma irradiation (10(4) Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and Al2O3. Before treatment, strong generation-recombination (GR) noise components are observed. These data are used to identify several charge traps related to dielectric layers of the FETs by determining their activation energy.

Stability of the Tomonaga-Luttinger liquid state in gamma-irradiated carbon nanotube bundles.

We report experimental results for the changes in conductivity of single-wall carbon nanotube bundles when irradiated by (60)Co γ-rays in various environments. In the current study the samples investigated were irradiated in hermetic cells, either evacuated (0.1 Pa) or filled with hydrogen or deuterium at atmospheric pressure.