Catalytic Applications of Non-Centrosymmetric Oxide Nanomaterials.

Noble-metal-free catalytic nanoparticles hold the promise being abundant, low-cost materials having a small environmental footprint and excellent performance, albeit inferior to that of noble metal counterparts. Several materials have a long-standing history of success in photocatalysis, in particular titanium dioxide, and in recent years more complex oxides and added functionality have emerged with enhanced performance. We will discuss different approaches related to the use of non-centrosymmetric and polar oxide nanoparticles and how the bulk photovoltaic effect, piezoelectricity, and pyroelectricity add to photocatalysis and tribocatalysis.

Sample induced intensity variations of localized surface plasmon resonance in tip-enhanced Raman spectroscopy.

Tip-enhanced spectroscopy techniques, in particular tip-enhanced Raman spectroscopy (TERS), rely on a localized surface plasmon resonance (LSPR). This LSPR depends on the near field antenna, its material and shape, and the surrounding medium with respect to its relative permittivity and the volume fraction of the optical near field occupied by the sample. Here, we investigate the effects of the surface composition and topography on the change of the LSPR intensity in tip-enhanced spectroscopy on SrTiO nanoislands by monitoring the LSPR enhanced luminescence of gold tips.

Topography-induced variations of localized surface plasmon resonance in tip-enhanced Raman configuration.

We report on topography-induced changes of the localized surface plasmon resonance (LSPR) enhanced luminescence of gold tip on SrTiO nanostructures with apertureless scanning near-field optical microscopy (aSNOM) in tip-enhanced Raman spectroscopy (TERS) configuration. Our experimental and simulated results indicate that the averaged refractive index of the dielectric environment of the tip apex containing both air and SrTiO in variable volume ratios, is dependent on the topography of the sample. This reveals that the local topography has to be taken into consideration as an additional contribution to the position of the LSPR.

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction.

In recent years, experimental demonstration of ferroelectric tunnel junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating these perovskite materials into conventional silicon memory technology remains challenging due to their lack of compatibility with the complementary metal oxide semiconductor process (CMOS). This communication reports the fabrication of an FTJ based on a CMOS-compatible tunnel barrier HfZrO (6 unit cells thick) on an equally CMOS-compatible TiN electrode.