Catalytic Hydrogen Doping of NdNiO Thin Films under Electric Fields.

The electric-field-assisted hydrogenation and corresponding resistance modulation of NdNiO (NNO) thin-film resistors were systematically studied as a function of temperature and dc electric bias. Catalytic Pt electrodes serve as triple-phase boundaries for hydrogen incorporation into a perovskite lattice. A kinetic model describing the relationship between resistance modulation and proton diffusion was proposed by considering the effect of the electric field during hydrogenation.

Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides.

Phase-transition field-effect transistors (FETs) are a class of steep-slope devices that show abrupt on/off switching owing to the metal-insulator transition (MIT) induced in the contacting materials. An important avenue to develop phase-transition FETs is to understand the charge injection mechanism at the junction of the contacting MIT materials and semiconductor channels. Here, toward the realization of high-performance phase-transition FETs, we investigate the contact properties of heterojunctions between semiconducting transition-metal dichalcogenides (TMDCs) and vanadium dioxide (VO) that undergoes a MIT at a critical temperature () of approximately 340 K.

Three-Dimensional Nanoconfinement Supports Verwey Transition in FeO Nanowire at 10 nm Length Scale.

Herein, we construct three-dimensional (3D) FeO epitaxial nanowires at a 10 nm length scale on a 3D MgO nanotemplate using an original nanofabrication technique that mainly comprises nanoimprint lithography and inclined thin-film deposition. Despite the high density of inevitable nanoscale defects, the ultrasmall FeO nanowires exhibit a prominent Verwey transition at about 112 K with a maximum relative change in resistance of 9.5, which is 6 times larger than that of the thin-film configuration.

Non-contact detection of nanoscale structures using optical nanofiber.

The detection of nanoscale structure/material property in a wide observation area is becoming very important in various application fields. However, it is difficult to utilize current optical technologies. Toward the realization of novel alternative, we have investigated a new optical sensing method using an optical nanofiber.

Gate-Tunable Thermal Metal-Insulator Transition in VO Monolithically Integrated into a WSe Field-Effect Transistor.

Vanadium dioxide (VO) shows promise as a building block of switching and sensing devices because it undergoes an abrupt metal-insulator transition (MIT) near room temperature, where the electrical resistivity changes by orders of magnitude. A challenge for versatile applications of VO is to control the MIT by gating in the field-effect device geometry. Here, we demonstrate a gate-tunable abrupt switching device based on a VO microwire that is monolithically integrated with a two-dimensional (2D) tungsten diselenide (WSe) semiconductor by van der Waals stacking.

Strongly correlated perovskite lithium ion shuttles.

Solid-state ion shuttles are of broad interest in electrochemical devices, nonvolatile memory, neuromorphic computing, and biomimicry utilizing synthetic membranes. Traditional design approaches are primarily based on substitutional doping of dissimilar valent cations in a solid lattice, which has inherent limits on dopant concentration and thereby ionic conductivity. Here, we demonstrate perovskite nickelates as Li-ion shuttles with simultaneous suppression of electronic transport via Mott transition.

Identification of Giant Mott Phase Transition of Single Electric Nanodomain in Manganite Nanowall Wire.

In the scaling down of electronic devices, functional oxides with strongly correlated electron system provide advantages to conventional semiconductors, namely, huge switching owing to their phase transition and high carrier density, which guarantee their rich functionalities even at the 10 nm scale. However, understanding how their functionalities behave at a scale of 10 nm order is still a challenging issue. Here, we report the construction of the well-defined (La,Pr,Ca)MnO3 epitaxial oxide nanowall wire by combination of nanolithography and subsequent thin-film growth, which allows the direct investigation of its insulator-metal transition (IMT) at the single domain scale.

Selection of di(meth)acrylate monomers for low pollution of fluorinated mold surfaces in ultraviolet nanoimprint lithography.

We used fluorescence microscopy to show that low adsorption of resin components by a mold surface was necessary for continuous ultraviolet (UV) nanoimprinting, as well as generation of a low release energy on detachment of a cured resin from a template mold. This is because with low mold pollution, fracture on demolding occurred at the interface between the mold and cured resin surfaces rather than at the outermost part of the cured resin. To achieve low mold pollution, we investigated the radical photopolymerization behaviors of fluorescent UV-curable resins and the mechanical properties (fracture toughness, surface hardness, and release energy) of the cured resin films for six types of di(meth)acrylate-based monomers with similar chemical structures, in which polar hydroxy and aromatic bulky bisphenol moieties and methacryloyl or acryloyl reactive groups were present or absent.

MoS₂ nanocube structures as catalysts for electrochemical H₂ evolution from acidic aqueous solutions.

Core-shell PMMA-Au nanocube structures made by a combination of nanoimprint lithography and sidewall deposition were used as template for electrodeposition of MoS2, Ni, and Pt. Linear sweep voltammetry experiments obtained in an aqueous solution containing 0.29 M H2SO4 (pH 0.

Controlled fabrication of artificial ferromagnetic (Fe,Mn)3O4 nanowall-wires by a three-dimensional nanotemplate pulsed laser deposition method.

We have developed a new method to fabricate extremely small transition-metal oxide nanowires. Using a combination of nanoimprint template patterning and inclined substrate pulsed laser deposition, we successfully fabricated magnetic oxide Fe(2.5)Mn(0.

Position-controlled functional oxide lateral heterostructures consisting of artificially aligned (Fe,Zn)3O4 nanodots and BiFeO3 matrix.

We demonstrate an advanced fabrication method for perfectly position-controlled ferromagnetic semiconductor (Fe,Zn)(3)O(4) nanodot arrays down to several hundred nanometers in size surrounded by a ferroelectric BiFeO(3) matrix. By performing position-selective crystal growth of perovskite BiFeO(3) on the position-controlled epitaxial spinel (Fe,Zn)(3)O(4) nanodot-seeding template, which is prepared using a hollow molybdenum mask lift-off nanoimprint lithography process on a perovskite La-doped SrTiO(3)(001) substrate, we produce functional oxide three-dimensional lateral heterojunctions. The position-selectivity can be explained based on standard surface diffusion theory with a critical nucleation point.

Position-, size-, and shape-controlled highly crystalline ZnO nanostructures.

Highly ordered ZnO nanoboxes and nanowire structures with a width of ∼ 20 nm have been successfully fabricated by the combination of nanoimprint lithography and pulsed laser deposition utilizing a glancing angle deposition (GLAD) technique. The periodicity, size, and shape of the ZnO nanoboxes and nanobelts can be easily controlled over a large area by changing the molds and deposition conditions. At the initial stage of growth by GLAD, nanonucleation led to nanopillar structures, which agglomerated to form nanobox and nanobelt structures at room temperature (RT).

Efficient wet etching of GaN (0001) substrate with subsurface damage layer.

Photoenhanced chemical (PEC) etching is applicable for processing an n-GaN (0001) surface rapidly. In this process, the surface oxidation is enhanced by photo-generated holes and the resulting oxide can dissolve into solutions. In current work, we conduct bias-assisted PEC etching in a KOH solution with a positively biased wafer, to remove the crystallographically highly damaged layer.

Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H-SiC(0001) surface.

Catalyst-referred etching (CARE) is a novel abrasive-free planarization method. CARE-processed 4H-SiC(0001) surfaces are extremely flat and undamaged over the whole wafer. They consist of single-bilayer-height atomic steps and atomically flat terraces.

Structure and magnetic properties of mono- and bi-layer graphene films on ultraprecision figured 4H-SiC(0001) surfaces.

Monolayer and bilayer graphene films with a few hundred nm domain size were grown on ultraprecision figured 4H-SiC(0001) on-axis and 8 degrees -off surfaces by annealing in ultra-high vacuum. Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy, reflection high-energy electron diffraction, low-energy electron diffraction (LEED), Raman spectroscopy, and scanning tunneling microscopy, we investigated the structure, number of graphene layers, and chemical bonding of the graphene surfaces. Moreover, the magnetic property of the monolayer graphene was studied using in-situ surface magneto-optic Kerr effect at 40 K.

Improved optical and electrical characteristics of free-standing GaN substrates by chemical polishing utilizing photo-electrochemical method.

The optical and electrical properties of GaN(0001) surfaces treated by a novel chemical polishing method are described. Scanning microscopic photoluminescence images reveal that the polished GaN surface shows improved luminescence properties compared to the untreated surface. Current-voltage measurements of Schottky barriers formed using the GaN substrates show that the polished GaN surface has a lower reverse leakage current, and that the barrier height and ideality factor are improved after the polishing treatment.