Although the effect of resonant tunneling in metal-double-insulator-metal (MIM) diodes has been predicted for over two decades, no experimental demonstrations have been reported at the low voltages needed for energy harvesting rectenna applications. Using quantum-well engineering, we demonstrate the effects of resonant tunneling in a Ni/NiO/AlO/Cr/Au MIM structures and achieve the usually mutually exclusive desired characteristics of low resistance ([Formula: see text] 13 kΩ for 0.035 μm) and high responsivity (β = 0.
View Article and Find Full Text PDF