The role of native point defects and donor impurities in the electrical properties of ZnSbO: a hybrid density-functional study.

The ceramic material zinc antimony oxide ZnSbO has promising electrical and magnetic properties, making it suitable for various applications such as electrochemical and energy storage. However, the effects of point defects and impurities on its electrical properties have never been revealed. Here, we employ hybrid density-functional calculations to investigate the energetics and electronic properties of native point defects and donor impurities in ZnSbO.

Rare-earth-incorporated ternary Ce Cd S quantum dot-sensitized solar cells.

This work presents a new absorber material - rare-earth-doped ternary Ce Cd S quantum dots (QDs) - for solar cells. Ce Cd S QDs were synthesized by partially replacing the cation Cd in the binary sulfide CdS with Ce using a two-step solution processing process. First, Ce-S QDs were grown on a mesoporous TiO electrode.

Effect of Annealing Temperatures on Morphological and Electrical Performances of Amorphous-Like Structured Tin Manganese Telluride Nanocomposite Films.

SnMnTe nanocomposite films were synthesized at various annealing temperatures within 240 min. The morphological properties of these films were investigated as a function of the annealing temperature, 50-400 °C. The X-ray diffraction patterns revealed an amorphous structure of the films at all annealing temperatures tested above.

Manganese-Doped Copper Tin Telluride Absorber Layer-Sensitized Solar Cells.

Manganese2+-doped copper tin telluride nanoparticles (Mn2+:Cu2SnTe3 NPs), as an absorber layer, were grown using a chemical bath deposition (CBD) technique and demonstrated for solar cell applications. The cubical structure was formed on the WO3 surface with the band gap (Eg) of Cu2SnTe3 NPs decreased from 1.80 to 1.

Deposition Time Dependent Properties of Copper Tin Telluride (Cu₂SnTe₃) Nanoparticles for Solar Absorber Applications.

We report the growth of copper tin telluride nanoparticles as an absorber layer using a chemical bath deposition (CBD) process for solar selective applications. The XRD results showed the phase of Cu2SnTe3 with a cubical structure. The larger-sized nanoparticles resulted with increased absorption properties and the optical band gap ranging from 1.

Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices.

This work demonstrates the synthesis of a novel double-layered Cu2-xTe/MnTe structure on a WO3 photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu2-xTe(17) ∼5-10nm and MnTe(3) ∼2nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu2-xTe(17)/MnTe(11) are ∼50 and 150nm, respectively.

Photovoltaic performances of Cu2-xTe sensitizer based on undoped and indium(3+)-doped TiO2 photoelectrodes and assembled counter electrodes.

Novel binary Cu2-xTe nanoparticles based on undoped and indium-doped TiO2 photoelectrodes were synthesized using a successive ionic layer adsorption and reaction (SILAR) technique as a sensitizer for liquid-junction solar cells. A larger diameter of TiO2 promoted a narrower energy band gap after indium doping, attributing to yield a broader absorption range of nanoparticle sensitizer due to the increasing amount of Cu2-xTe NPs on TiO2 surface. The atomic percentages showed the stoichiometric formation of Cu2Te incorporated in a Cu2-xTe structure.

Undoped and Manganese(2+)-doped polycrystalline Cd1-xInxTe sensitizer for liquid-junction solar cell devices.

Ternary Cd1-xInxTe semiconductor nanoparticles have been demonstrated to be sensitizers for solar cell devices. The chemical bath deposition (CBD) process was used to synthesize Cd1-xInxTe nanoparticles, which were deposited onto a mesoporous TiO2 photoelectrode. Individual nanoparticles were estimated to have an average diameter range of ∼10nm.

MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications.

We report a new tailoring MnTe semiconductor-sensitized solar cells (MnTe SSCs) using successive ionic layer adsorption and reaction (SILAR) technique. X-ray diffraction and SAED patterns reveal the orthorhombic MnTe and cubic MnTe2 phases were grown on boron-doped TiO2 and ZnO nanoparticles. The diameter of MnTe NPs ranged from 15 to 30nm on both B-doped metal oxide structures.