Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}.

Distinct to type-I Weyl semimetals (WSMs) that host quasiparticles described by the Weyl equation, the energy dispersion of quasiparticles in type-II WSMs violates Lorentz invariance and the Weyl cones in the momentum space are tilted. Since it was proposed that type-II Weyl fermions could emerge from (W,Mo)Te_{2} and (W,Mo)P_{2} families of materials, a large number of experiments have been dedicated to unveiling the possible manifestation of type-II WSMs, e.g.

SrPt As: a layered incommensurately modulated metal with saturated resistivity.

The high-pressure synthesis and incommensurately modulated structure are reported for the new compound SrPt As, with = 0.715 (5). The structure consists of SrPtAs layers alternating with Pt-only corrugated grids.

Distinct Evolutions of Weyl Fermion Quasiparticles and Fermi Arcs with Bulk Band Topology in Weyl Semimetals.

The Weyl semimetal phase is a recently discovered topological quantum state of matter characterized by the presence of topologically protected degeneracies near the Fermi level. These degeneracies are the source of exotic phenomena, including the realization of chiral Weyl fermions as quasiparticles in the bulk and the formation of Fermi arc states on the surfaces. Here, we demonstrate that these two key signatures show distinct evolutions with the bulk band topology by performing angle-resolved photoemission spectroscopy, supported by first-principles calculations, on transition-metal monophosphides.

Two-Orbital Kondo Screening in a Self-Assembled Metal-Organic Complex.

Iron atoms adsorbed on a Cu(111) surface and buried under polyphenyl dicarbonitrile molecules exhibit strongly spatial anisotropic Kondo features with directionally dependent Kondo temperatures and line shapes, as evidenced by scanning tunneling spectroscopy. First-principles calculations find nearly full polarization for the half-filled Fe 3d and 3d orbitals, which therefore can give rise to Kondo screening with the experimentally observed directional dependence and distinct Kondo temperatures. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements confirm that the spin in both channels is effectively Kondo-screened.

Evidence for a Strong Topological Insulator Phase in ZrTe_{5}.

The complex electronic properties of ZrTe_{5} have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of ZrTe_{5}, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state.

Robust Type-II Weyl Semimetal Phase in Transition Metal Diphosphides XP_{2} (X=Mo, W).

The recently discovered type-II Weyl points appear at the boundary between electron and hole pockets. Type-II Weyl semimetals that host such points are predicted to exhibit a new type of chiral anomaly and possess thermodynamic properties very different from their type-I counterparts. In this Letter, we describe the prediction of a type-II Weyl semimetal phase in the transition metal diphosphides MoP_{2} and WP_{2}.

Observation of Weyl nodes and Fermi arcs in tantalum phosphide.

A Weyl semimetal possesses spin-polarized band-crossings, called Weyl nodes, connected by topological surface arcs. The low-energy excitations near the crossing points behave the same as massless Weyl fermions, leading to exotic properties like chiral anomaly. To have the transport properties dominated by Weyl fermions, Weyl nodes need to locate nearly at the chemical potential and enclosed by pairs of individual Fermi surfaces with non-zero Fermi Chern numbers.

A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4.

Recent progress in the field of topological states of matter has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs; refs ,,,), followed by closely related ternary compounds and predictions of several weak TIs (refs ,,). However, both the conceptual richness of Z2 classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z2 topological insulator is theoretically predicted and experimentally confirmed in the β-phase of quasi-one-dimensional bismuth iodide Bi4I4.

Electromechanical oscillations in bilayer graphene.

Nanoelectromechanical systems constitute a class of devices lying at the interface between fundamental research and technological applications. Realizing nanoelectromechanical devices based on novel materials such as graphene allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this work, we realize electromechanical devices using single and bilayer graphene and probe the interplay between their mechanical and electrical properties.

Electronic transport in graphene with aggregated hydrogen adatoms.

Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger size adatom aggregates. Such spatial correlation is found to strongly influence the electronic transport properties of disordered graphene.

Infrared- and Raman-spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure.

BiTeI is a giant Rashba spin splitting system, in which a noncentrosymmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to 15 GPa. The gap feature in the optical conductivity vanishes above p∼9  GPa and does not reappear up to at least 15 GPa.

Magnetic moment and anisotropy of individual Co atoms on graphene.

We report on the magnetic properties of single Co atoms on graphene on Pt(111). By means of scanning tunneling microscopy spin-excitation spectroscopy, we infer a magnetic anisotropy of K=-8.1  meV with out-of-plane hard axis and a magnetic moment of 2.

Electronic instability in a zero-gap semiconductor: the charge-density wave in (TaSe4)2I.

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe(4))(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T(CDW)=263  K, where the incommensurability is a direct consequence of the finite interchain coupling.

Giant ambipolar Rashba effect in the semiconductor BiTeI.

We observe a giant spin-orbit splitting in the bulk and surface states of the noncentrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases, it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers.

Strong enhancement of the tunneling magnetoresistance by electron filtering in an Fe/MgO/Fe/GaAs(001) junction.

Calculations of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe tunneling junction attached to an n-type GaAs lead, under positive gate voltage, are presented. It is shown that for realistic GaAs carrier densities the TMR of this composite system can be more than 2 orders of magnitude higher than that of a conventional Fe/MgO/Fe junction. Furthermore, the high TMR is achieved with modest MgO thicknesses and is very robust to disorder at the Fe/GaAs interface and within the GaAs layer itself.