Publications by authors named "Austing D"

Semiconductor nanowires offer a versatile platform for the fabrication of new nanoelectronic and nanophotonic devices. These devices will require a high level of control of the nanowire position in relation to both other components of the device and to other nanowires. We demonstrate unprecedented control of the position of InAs nanowires using selective-area vapor-liquid-solid epitaxy (VLS) on an InP ridge template.

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We investigate two- and three-electron spin blockade in three vertical quantum dots (QDs) coupled in series. Two-electron spin blockade is found in a region where sequential tunneling through all QDs is forbidden but tunneling involving virtual hopping through an empty QD is allowed. It is observed only for the hole cycle with a distinct bias threshold for access to the triplet state.

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We observe magnetic-field-induced level mixing and quantum superposition phenomena between three approaching single-particle states in a quantum dot probed via the ground state of an adjacent quantum dot by single-electron resonant tunneling. The mixing is attributed to anisotropy and anharmonicity in realistic dot confining potentials. The pronounced anticrossing and transfer of strengths (both enhancement and suppression) between resonances can be understood with a simple coherent level mixing model.

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Single walled carbon nanotubes (SWNTs) suspended above the substrate can be fabricated simply and rapidly by chemical vapour deposition growth over pre-grown multi-walled carbon nanotubes (MWNTs). SWNTs are suspended either on a randomly organized carbon nanotube network on an unpatterned substrate, or between organized pillars made from vertically aligned nanotube forests on a patterned substrate. All nanotubes are produced during a single growth run using a two step growth technique.

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Single-walled carbon nanotubes (SWNTs) suspended in air over trenches are imaged using their intrinsic near-infrared (NIR) photoluminescence (1.0-1.6 microm).

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The strength of radiative transitions in atoms is governed by selection rules that depend on the occupation of atomic orbitals with electrons. Experiments have shown similar electron occupation of the quantized energy levels in semiconductor quantum dots--often described as artificial atoms. But unlike real atoms, the confinement potential of quantum dots is anisotropic, and the electrons can easily couple with phonons of the material.

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We observe spin blockade due to Pauli exclusion in the tunneling characteristics of a coupled quantum dot system when two same-spin electrons occupy the lowest energy state in each dot. Spin blockade only occurs in one bias direction when there is asymmetry in the electron population of the two dots, leading to current rectification. We induce the collapse of the spin blockade by applying a magnetic field to open up a new spin-triplet current-carrying channel.

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We investigate nonequilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel nonequilibrium tunneling processes involving high-spin states, which cannot be excited from the ground state because of spin blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory.

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We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0 T as a function of interdot distance. A slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2 meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit.

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We determine contributions from the direct Coulomb and exchange interactions to the total interaction in artificial semiconductor atoms. We tune the relative strengths of the two interactions and measure them as a function of the number of confined electrons. The electrons tend to have parallel spins when they occupy nearly degenerate single-particle states.

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Studies of the ground and excited states in semiconductor quantum dots containing 1 to 12 electrons showed that the quantum numbers of the states in the excitation spectra can be identified and compared with exact calculations. A magnetic field induces transitions between the ground and excited states. These transitions were analyzed in terms of crossings between single-particle states, singlet-triplet transitions, spin polarization, and Hund's rule.

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