Unveiling the Influence of Hot Carriers on Photovoltage Formation in Perovskite Solar Cells.

The experimental and theoretical study of photovoltage formation in perovskite solar cells under pulsed laser excitation at 0.53 μm wavelength is presented. Two types of solar cells were fabricated on the base of cesium-containing triple cation perovskite films: (1) Cs(FAMA)Pb(IBr) and (2) Cs(FAMA)PbSn(IBr).

Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures.

The application of the unique properties of terahertz radiation is increasingly needed in sensors, especially in those operating at room temperature without an external bias voltage. Bow-tie microwave diodes on the base of InGaAs semiconductor structures meet these requirements. These diodes operate on the basis of free-carrier heating in microwave electric fields, which allows for the use of such sensors in millimeter- and submillimeter-wavelength ranges.

Photoelectric Properties of Planar and Mesoporous Structured Perovskite Solar Cells.

The high efficiency of perovskite solar cells strongly depends on the quality of perovskite films and carrier extraction layers. Here, we present the results of an investigation of the photoelectric properties of solar cells based on perovskite films grown on compact and mesoporous titanium dioxide layers. Kinetics of charge carrier transport and their extraction in triple-cation perovskite solar cells were studied by using transient photovoltage and time-resolved photoluminescence decay measurements.

Indirect Measurement of Electron Energy Relaxation Time at Room Temperature in Two-Dimensional Heterostructured Semiconductors.

Hot carriers are a critical issue in modern photovoltaics and miniaturized electronics. We present a study of hot electron energy relaxation in different two-dimensional electron gas (2DEG) structures and compare the measured values with regard to the dimensionality of the semiconductor formations. Asymmetrically necked structures containing different types of AlGaAs/GaAs single quantum wells, GaAs/InGaAs layers, or bulk highly and lowly doped GaAs formations were investigated.

Impact of Cesium Concentration on Optoelectronic Properties of Metal Halide Perovskites.

Performance of a perovskite solar cell is largely influenced by the optoelectronic properties of metal halide perovskite films. Here we study the influence of cesium concentration on morphology, crystal structure, photoluminescence and optical properties of the triple cation perovskite film. Incorporation of small amount (x = 0.

An Automotive Ferrofluidic Electromagnetic System for Energy Harvesting and Adaptive Damping.

Vibration energy harvesting is receiving significant interest due to the possibility of using extra power in various machines and constructions. This paper presents an energy-harvesting system that has a structure similar to that of a linear generator but uses permanent magnets and magnetorheological fluid insets. The application of a standard vehicle example with low frequencies and amplitudes of the excitations was used for the optimization and experimental runs.

Sensitive Planar Microwave Diode on the Base of Ternary AlGaAs Semiconductor Compound.

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the -AlGaAs layer ( = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate.

Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection.

We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel. The gate influences the sensing properties of the bow-tie diode depending on the nature of voltage detected across the ungated one as well as on the location of the gate in regard to the diode contacts.