Publications by authors named "Aurelien Manchon"

We predict a very large spin-orbit torque (SOT) capability of magnetic chromium-based transition-metal dichalcogenide (TMD) monolayers in their Janus forms CrXTe, with X = S, Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of ∼100 V nm in non-Janus CrTe, completely out of experimental reach. By performing transport simulations on carefully derived Wannier tight-binding models, Janus systems are found to exhibit an SOT performance comparable to the most efficient two-dimensional materials, while additionally allowing for field-free perpendicular magnetization switching, due to their reduced in-plane symmetry.

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The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here, we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and, consequently, a current-induced torque can exist even in the absence of the spin-orbit coupling.

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Coherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a paucity of both structural prototypes and theoretical frameworks that regulate the spin current transmission and magnon hybridization mediated by coherent spin waves. Here, we demonstrate reconfigurable coherent spin current transmission, as well as magnon-magnon coupling, in a hybrid ferrimagnetic heterostructure comprising epitaxial GdFeO and YFeO insulators.

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The modern theory of quantized polarization has recently extended from 1D dipole moment to multipole moment, leading to the development from conventional topological insulators (TIs) to higher-order TIs, i.e., from the bulk polarization as primary topological index, to the fractional corner charge as secondary topological index.

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The Hall effect has played a vital role in unraveling the intricate properties of electron transport in solid materials. Here, we report on a crystal symmetry-dependent in-plane Hall effect (CIHE) observed in a CuPt/CoPt ferromagnetic heterostructure. Unlike the planar Hall effect (PHE), the CIHE in CuPt/CoPt strongly depends on the current flowing direction (ϕ) with respect to the crystal structure.

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Owing to their use in the optoelectronic industry, we investigate whether ZnSe and ZnTe can be utilised as tunnel barrier materials in magnetic spin valves. We perform electronic structure and linear response transport calculations based on self-interaction-corrected density functional theory for both Fe/ZnSe/Fe and Fe/ZnTe/Fe junctions. In the Fe/ZnSe/Fe junction the transport is tunneling-like and a symmetry-filtering mechanism is at play, implying that only the majority spin electrons with symmetry are transmitted with large probability, resulting in a potentially large tunneling magnetoresistance (TMR) ratio.

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Topological phases of matter are conventionally characterized by the bulk-boundary correspondence in Hermitian systems. The topological invariant of the bulk in d dimensions corresponds to the number of (d - 1)-dimensional boundary states. By extension, higher-order topological insulators reveal a bulk-edge-corner correspondence, such that nth order topological phases feature (d - n)-dimensional boundary states.

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The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron-mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices.

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Van der Waals materials are attracting great attention in the field of spintronics due to their novel physical properties. For example, they are utilized as spin-current generating materials in spin-orbit torque (SOT) devices, which offers an electrical way to control the magnetic state and is promising for future low-power electronics. However, SOTs have mostly been demonstrated in vdW materials with strong spin-orbit coupling (SOC).

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All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoPt single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field.

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Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear.

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A magnonic metamaterial in the presence of spatially modulated Dzyaloshinskii-Moriya interaction is theoretically proposed and demonstrated by micromagnetic simulations. By analogy to the fields of photonics, we first establish magnonic Snell's law for spin waves passing through an interface between two media with different dispersion relations due to different Dzyaloshinskii-Moriya interactions. Based on magnonic Snell's law, we find that spin waves can experience total internal reflection.

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Recently, the interest in spin pumping (SP) has escalated from ferromagnets into antiferromagnetic systems, potentially enabling fundamental physics and magnonic applications. Compensated ferrimagnets are considered alternative platforms for bridging ferro- and antiferromagnets, but their SP and the associated magnetic damping have been largely overlooked so far despite their seminal importance for magnonics. Herein, an unconventional SP together with magnetic damping in an insulating compensated ferrimagnet Gd Fe O (GdIG) is reported.

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Ferromagnetic spin valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of noncollinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and antiparallel states of the junction.

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Chiral magnets endowed with topological spin textures are expected to have promising applications in next-generation magnetic memories. In contrast to the well-studied 2D or 3D magnetic skyrmions, the authors report the discovery of 1D nontrivial magnetic solitons in a transition metal dichalcogenide 2H-TaS via precise intercalation of Cr elements. In the synthetic Cr TaS (CTS) single crystal, the coupling of the strong spin-orbit interaction from TaS and the chiral arrangement of the magnetic Cr ions evoke a robust Dzyaloshinskii-Moriya interaction.

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Nonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states.

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Modern magnetic-memory technology requires all-electric control of perpendicular magnetization with low energy consumption. While spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) heterostructures holds promise for applications in magnetic random access memory, until today, it has been limited to the in-plane direction. Such in-plane torque can switch perpendicular magnetization only deterministically with the help of additional symmetry breaking, for example, through the application of an external magnetic field, an interlayer/exchange coupling or an asymmetric design.

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Two-dimensional electron gas (2DEG) at the interface between two insulating perovskite oxides has attracted much interest for both fundamental physics and potential applications. Here, we report the discovery of a new 2DEG formed at the interface between spinel MgAlO and perovskite SrTiO. Transport measurements, electron microscopy imaging, and first-principles calculations reveal that the interfacial 2DEG is closely related to the symmetry breaking at the MgAlO/SrTiO interface.

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Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L1 phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L1 FePt magnet, ultimately leading to reversible magnetization switching.

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Achieving a two-dimensional material with tunable magnetic anisotropy is highly desirable, especially if it is complemented with out-of-plane electric polarization, as this could provide a versatile platform for spintronic and multifunctional devices. Using first principles calculations, we demonstrate that the magnetic anisotropy of Cr-trihalides become highly sensitive to mechanical strain upon structural inversion symmetry breaking through the realization of Janus monolayers. This remarkable feature, absent in pristine Cr-trihalide monolayers, enables mechanical control of the direction of the easy axis: biaxial compressive/tensile strain supports in-plane/out-of-plane orientation of the easy axis.

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The direct imaging of current density vector distributions in thin films has remained a daring challenge. Here, we report that an inhomogeneous current distribution can be mapped directly by the trajectories of magnetic half-skyrmions driven by an electrical current in Pt/Co/Ta trilayer, using polar magneto-optical Kerr microscopy. The half-skyrmion carries a topological charge of 0.

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The Rashba effect plays important roles in emerging quantum materials physics and potential spintronic applications, entailing both the spin orbit interaction (SOI) and broken inversion symmetry. In this work, we devise asymmetric oxide heterostructures of LaAlO//SrTiO/LaAlO (LAO//STO/LAO) to study the Rashba effect in STO with an initial centrosymmetric structure, and broken inversion symmetry is created by the inequivalent bottom and top interfaces due to their opposite polar discontinuities. Furthermore, we report the observation of a transition from the cubic Rashba effect to the coexistence of linear and cubic Rashba effects in the oxide heterostructures, which is controlled by the filling of Ti orbitals.

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We demonstrate a unidirectional motion of a quasiparticle without explicit symmetry breaking along the space-time coordinate of the particle motion. This counterintuitive behavior originates from a combined action of two intrinsic asymmetries in the other two directions. We realize this idea with the magnon-driven motion of a magnetic domain wall in thin films with interfacial asymmetry.

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It is well known that moving magnetic textures may pump spin and charge currents along the direction of motion, a phenomenon called electronic pumping. Here, the electronic pumping arising from the steady motion of ferromagnetic skyrmions is investigated by solving the time evolution of the Schrödinger equation implemented on a tight-binding model with the statistical physics of the many-body problem. In contrast with rigid one-dimensional magnetic textures, we show that steadily moving magnetic skyrmions are able to pump large dc currents.

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The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component.

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