Vertically aligned carbon nanofibers (VA-CNFs)-carbon nanowalls (CNWs) have been prepared on a silicon (Si) substrate by plasma-enhanced chemical vapor deposition. The VA-CNFs-CNWs were formed at bias voltage of - 185 V, whereas conventional VA-CNFs were synthesized under conditions of high bias voltages. Degenerated CNWs with turbostratic graphite structure were created on amorphous carbon layer around CNFs like a flag attached to a pole, which is evidenced by scanning electron microscopy, transmission electron microscopy, electron diffraction, and micro-Raman spectroscopy.
View Article and Find Full Text PDFAmino-functionalized graphene quantum dots (af-GQDs) with discrete molecular weights and specific edges were self-limitedly extracted from oxidized graphene sheet. Their optical properties can be precisely controlled only by the selective and quantitative functionalization at the edge sites. The af-GQDS exhibit bright colorful fluorescence under a single-wavelength excitation.
View Article and Find Full Text PDFCylindrical carbon nanotubes (CNTs) pretreated by UV irradiation were able to react with NH(3) to give nitrogen-containing CNTs without destroying their vertically aligned morphology. This process provided incorporation of nitrogen mostly at pyridinic and pyrrolic sites and promoted disordering, which was correlated with decreased electrical conductivity of CNT yarns.
View Article and Find Full Text PDFWe developed a novel anti-agglomeration method that enables preservation of the vertical alignment of carbon nanotubes (CNTs) during desiccation of wet CNTs by utilizing antisolvent precipitation and sublimation of naphthalene (Nap). Moreover, we succeeded in depositing Pt nanoparticles onto CNTs without collapse of the vertically aligned morphology by this method.
View Article and Find Full Text PDFColloidal Fe-V-O nanoparticles prepared as carbon nanotube (CNT) growth catalysts were precisely size-classified by fractional precipitation. Furthermore, the classification ability was improved by the fractional precipitation after ligand exchange process, which allowed us to obtain narrower size distributions of nanoparticles. CNTs were grown from the nanoparticles in order to investigate the dependence of diameter distribution of CNTs on that of nanoparticles.
View Article and Find Full Text PDFSilicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices. Careful consideration of the thermal conditions in which SiC [0001] is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes), inclusions, small-angle boundaries and long-range lattice warp has been reduced. But some macroscopic defects (about 1-10 cm(-2)) and a large density of elementary dislocations (approximately 10(4) cm(-2)), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12-16).
View Article and Find Full Text PDF