Spin-orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions.

We have studied current induced magnetization switching in W/CoFeB/MgO based three terminal magnetic tunnel junctions. The switching driven by spin-orbit torque (SOT) is evaluated in the so-called type-Y structure, in which the magnetic easy-axis of the CoFeB layer lies in the film plane and is orthogonal to the current flow. The effective spin Hall angle estimated from the bias field dependence of critical current (I) is ~ 0.