Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits.

We report a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits.