Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors.

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used to control bulk acoustic wave to transmit in the directions parallel to the surface of the silicon wafer. Passive 45° mirror planes obtained by wet chemical etching were employed to reflect the bulk acoustic wave.

SU-8-based nanocomposites for acoustical matching layer.

SU-8, an epoxy-based photoresist, was introduced as the acoustical matching layer between silicon and water for lab-on-chip applications integrating acoustic characterization. Acoustical performances, including the acoustic longitudinal wave velocity and attenuation of the SU-8-based matching layer, were characterized at a frequency of 1 GHz at room temperature. The gain in echo characterization with a SU-8/SiO2 bilayer and with different nanocomposite monolayers made of SU-8 and TiO2 nanoparticles (size around 35 nm) between silicon and water was characterized as being above 10 dB in each case.