Xe interacting with porous silicon.

Thin films of porous silicon (PS), structurally characterized by HR-SEM, were studied using xenon Temperature Programmed Desorption (TPD) as a probe of its inner pores. Geometric hindrance of the depth desorbing population and multiple wall collisions result in a unique double-peak structure of the TPD curve. Surface-diffusion assisted adsorption mechanism into inner pores at 48 K is proposed as the origin of these unique TPD spectra.