Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis.

Identification and evaluation of defect levels in low-dimensional materials is an important aspect in quantum science. In this article, we report a facile synthesis method of low-dimensional hexagonal boron nitride (h-BN) and study light emission characteristics due to the defects. The thermal annealing procedure is optimized to obtain clean multilayered h-BN as revealed by transmission electron microscopy.