The few-layer transition metal dichalcogenides (TMD) are an attractive class of materials due to their unique and tunable electronic, optical, and chemical properties, controlled by the layer number, crystal orientation, grain size, and morphology. One of the most commonly used methods for synthesizing the few-layer TMD materials is the chemical vapor deposition (CVD) technique. Therefore, it is crucial to develop in situ inspection techniques to observe the growth of the few-layer TMD materials directly in the CVD chamber environment.
View Article and Find Full Text PDFThe synergistic effect of high-quality NiOhole transport layers (HTLs) deposited by ion beam sputtering on ITO substrates and the TiCTMXene doping of CHNHPbI(MAPI) perovskite layers is investigated in order to improve the power conversion efficiency (PCE) of p-i-n perovskite solar cells (PSCs). The 18 nm thick NiOlayers are pinhole-free and exhibit large-scale homogeneous surface morphology as revealed by the atomic force microscopy (AFM). The grazing-incidence x-ray diffraction showed a 0.
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