Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell.

The nitrogenated holey two-dimensional carbon nitride (C2N) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The C2N possesses favorable optoelectronic properties. To investigate its potential feasibility for solar cells (as either an absorber layer/interface layer), we foremost detailed the numerical modeling of the double-absorber-layer−methyl ammonium lead iodide (CH3NH3PbI3) −carbon nitride (C2N) layer solar cell and subsequently provided in-depth insight into the active-layer-associated recombination losses limiting the efficiency (η) of the solar cell.