Non-Rigid Band Structure in MgGe for Improved Thermoelectric Performance.

Magnesium silicide and its solid solutions are among the most attractive materials for thermoelectric generators in the temperature range of 500-800 K. However, while n-type Mg(Si,Ge,Sn) materials show excellent thermoelectric performance, the corresponding p-type solid solutions are still inferior, mainly due to less favorable properties of the valence bands compared to the conduction bands. Here, Li doped MgGe with a thermoelectric figure of merit zT of 0.