Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection.

In this study, we use NEGF quantum transport simulations to study the fundamental detection limit of ultra-scaled Si nanowire FET (NWT) biosensors. A N-doped NWT is found to be more sensitive for negatively charged analytes as explained by the nature of the detection mechanism. Our results predict threshold voltage shifts due to a single-charge analyte of tens to hundreds of mV in air or low-ionic solutions.

The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport Study.

We study, using non-equilibrium Green's function simulations combined with first-principles density functional theory, the edge-state transport in two-dimensional topological insulators. We explore the impact of electron-phonon coupling on carrier transport through the protected states of two widely known topological insulators with different bulk gaps, namely stanene and bismuthene. We observe that the transport in a topological insulator with a small bulk gap (such as stanene) can be heavily affected by electron-phonon scattering, as the bulk states broaden into the bulk gap.

Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration.

The integration of III-V semiconductors on silicon (Si) substrate has been an active field of research for more than 30 years. Various approaches have been investigated, including growth of buffer layers to accommodate the lattice mismatch between the Si substrate and the III-V layer, Si- or Ge-on-insulator, epitaxial transfer methods, epitaxial lateral overgrowth, aspect-ratio-trapping techniques, and interfacial misfit array formation. However, manufacturing standards have not been met and significant levels of remaining defectivity, high cost, and complex integration schemes have hampered large scale commercial impact.

Nanowire transistors without junctions.

All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry.