Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector.

A self-powered, broad band and ultrafast photodetector based on n-InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type Si(111) substrate. The n-InGaN/AlN/n-Si(111) devices exhibit excellent self-powered photoresponse under UV-visible (300-800 nm) light illumination.