Development of Heterojunction c-Si/a-SiC:H PIN Light-Emitting Diodes.

In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-SiC:H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PINN structures, where a-SiC:H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device.